Semiconductor device having tipless epitaxial source/drain regions

ABSTRACT

A semiconductor device having tipless epitaxial source/drain regions and a method for its formation are described. In an embodiment, the semiconductor device comprises a gate stack on a substrate. The gate stack is comprised of a gate electrode above a gate dielectric layer and is above a channel region in the substrate. The semiconductor device also comprises a pair of source/drain regions in the substrate on either side of the channel region. The pair of source/drain regions is in direct contact with the gate dielectric layer and the lattice constant of the pair of source/drain regions is different than the lattice constant of the channel region. In one embodiment, the semiconductor device is formed by using a dielectric gate stack placeholder.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13,886,939, filed May 3, 2013, which is a divisional of U.S. patentapplication Ser. No. 11/748,376, filed May 14, 2007, now U.S. Pat. No.8,450,165, issued May 28, 2013, the entire contents of which are herebyincorporated by reference herein.

BACKGROUND OF THE INVENTION

1) Field of the Invention

The invention is in the field of Semiconductor Devices.

2) Description of Related Art

For the past several years, the performance of semiconductor devices,such as Metal Oxide Semiconductor Field-Effect Transistors (MOS-FETs),has been greatly enhanced by the incorporation of strained channelregions into the active portions of a semiconductor substrate, e.g. theuse of compressively strained silicon channel regions to enhance holemobility in P-type Metal Oxide Semiconductor Field-Effect Transistors(PMOS-FETs). The presence of such strained channel regions may greatlyenhance the rate at which charge migrates in a channel when asemiconductor device is in an ON state.

FIGS. 1A-C illustrate cross-sectional views representing a typicalprocess flow for forming strain-inducing source/drain regions in aPMOS-FET, in accordance with the prior art. Referring to FIG. 1A, anon-strained PMOS-FET 100 is first formed. Non-strained PMOS-FET 100 iscomprised of a channel region 102. A gate dielectric layer 104 sitsabove channel region 102 and a gate electrode 106 sits above gatedielectric layer 104. Gate dielectric layer 104 and gate electrode 106are isolated by gate isolation spacers 108. Tip extensions 110 andsource/drain regions 112 are formed by implanting dopant atoms intosubstrate 114 and are formed, in part, to reduce the parasiticresistance of non-strained PMOS-FET 100. Thus, the source/drain regions112 are initially formed from the same material as the channel region102. Therefore, the lattice mismatch between the source/drain regions112 and the channel region 102 is negligible, resulting in effectivelyno strain on the channel region 102.

Referring to FIG. 1B, portions of substrate 114, including source/drainregions 112, are removed by an etch process to form recessed regions 116in substrate 114. Subsequently, strain-inducing source/drain regions 120are formed by selectively growing an epitaxial film into recessedregions 116, as depicted in FIG. 1C. Strain-inducing source/drainregions 120 can be doped with charge-carrier atoms, e.g. boron in thecase of a PMOS-FET, which may be carried out in situ or after epitaxialfilm growth, or both. In an example, substrate 114, and hence channelregion 102, is comprised of crystalline silicon and the film grown toform strain-inducing source/drain regions 120 is comprised of epitaxialsilicon/germanium. The lattice constant of the epitaxialsilicon/germanium film is greater than that of crystalline silicon by afactor of ˜1% (for 70% Si, 30% Ge) and so strain-inducing source/drainregions 120 are comprised of a material with a larger lattice constantthan that of channel region 102. Therefore, a uniaxial compressivestrain, depicted by the arrows in FIG. 1C, is rendered on channel region102 in strained PMOS-FET 130, which can enhance hole mobility in thedevice.

One drawback to this approach is that gate isolation spacers 108 arerequired to inhibit undesirable material growth on gate electrode 106during epitaxial film growth to form strain-inducing source/drainregions 120, e.g. to inhibit the growth of silicon/germanium on apolysilicon gate electrode. The location of the strain-inducingsource/drain regions 120 relative to channel region 102 is thereforerestricted by the width of gate isolation spacers 108. Thus, theparasitic resistance-reducing ability and the strain-inducing ability ofstrain-inducing source/drain regions 120 may be limited. Tip extensions110 may be formed in substrate 114 to reduce the resistance of strainedPMOS-FET 130. However, tip extensions 110 are formed from the samematerial as channel region 102. Therefore, the lattice mismatch betweentip extensions 110 and the channel region 102 is negligible, resultingin effectively no additional strain on the channel region 102 from tipextensions 110.

Thus, a semiconductor device having tipless epitaxial source/drainregions and a method for its formation are described herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-C illustrate cross-sectional views representing a typicalprocess flow for forming strain-inducing source/drain regions in aPMOS-FET, in accordance with the prior art.

FIG. 2 illustrates a cross-sectional view representing a planar MOS-FEThaving tipless epitaxial source/drain regions, in accordance with anembodiment of the present invention.

FIGS. 3A-J illustrate cross-sectional views representing the formationof a planar MOS-FET having tipless epitaxial source/drain regions, inaccordance with an embodiment of the present invention.

FIGS. 4A-G illustrate cross-sectional views representing the formationof a trigate MOS-FET having unless epitaxial source/drain regions, inaccordance with an embodiment of the present invention.

FIGS. 5A-B illustrate cross-sectional views representing the formationof a planar MOS-FET having tipless epitaxial source/drain regions anddielectric spacers, in accordance with an embodiment of the presentinvention.

DETAILED DESCRIPTION

A semiconductor device having tipless epitaxial source/drain regions anda method for its formation are described. In the following description,numerous specific details are set forth, such as specific dimensions andchemical regimes, in order to provide a thorough understanding of thepresent invention. It will be apparent to one skilled in the art thatthe present invention may be practiced without these specific details.In other instances, well-known processing steps such as patterning stepsor wet chemical cleans are not described in detail in order to notunnecessarily obscure the present invention. Furthermore, it is to beunderstood that the various embodiments shown in the Figures areillustrative representations and are not necessarily drawn to scale.

Disclosed herein are a semiconductor device having tipless epitaxialsource/drain regions and a method to form such a device. In anembodiment, the semiconductor device comprises a gate stack on asubstrate. The gate stack may be comprised of a gate electrode above agate dielectric layer and may be above a channel region in thesubstrate. In one embodiment, the semiconductor device also comprises apair of source/drain regions in the substrate on either side of thechannel region. The pair of source/drain regions may be in directcontact with the gate dielectric layer and the lattice constant of thepair of source/drain regions may be different than the lattice constantof the channel region. In a specific embodiment, the semiconductordevice is formed by using a dielectric gate stack placeholder.

A semiconductor device comprising tipless epitaxial source/drain regionsmay exhibit improved performance resulting from an increase in thestrain-inducing ability of such source/drain regions. That is, theformation of strain-inducing source/drain regions in the absence of gateisolation spacers may enable the formation of strain-inducingsource/drain regions directly adjacent to the gate stack and, hence,closer to the channel region directly underneath the gate stack. Thus,in accordance with an embodiment of the present invention,strain-inducing source/drain regions are formed in direct contact withthe gate dielectric layer of a semiconductor device, optimizing theproximity of the strain-inducing source/drain regions to the channelregion of the semiconductor device. In one embodiment, this structuralarrangement provides for an increased mobility of charge-carriers in thechannel region when the semiconductor device is in an ON state. In aspecific embodiment, this structural arrangement eliminates the need fortip extensions because the parasitic resistance is mitigated by formingthe strain-inducing source/drain regions proximate to the channelregion.

The formation of strain-inducing source/drain regions directly adjacentto the gate stack may be carried out by using a dielectric gate stackplaceholder in a replacement gate scheme. Thus in accordance with anembodiment of the present invention, material growth is inhibited on adielectric gate stack placeholder, eliminating the need for gateisolation spacers during the fabrication of strain-inducing epitaxialsource/drain regions. In one embodiment, the dielectric gate stackplaceholder is subsequently replaced with an actual gate stack followingthe formation of strain-inducing epitaxial source/drain regions.

A semiconductor device may be formed having epitaxial source/drainregions in direct contact with a gate stack. FIG. 2 illustrates across-sectional view representing a planar MOS-FET having tiplessepitaxial source/drain regions, in accordance with an embodiment of thepresent invention.

Referring to FIG. 2, a semiconductor device 200 is comprised of asubstrate 202 having a channel region 204. A gate stack comprised of agate dielectric layer 206 and a gate electrode 218 site above channelregion 204. Strain-inducing epitaxial source/drain regions 208 areformed in substrate 202 on either side of and undercutting channelregion 204. Strain-inducing epitaxial source/drain regions 208 are indirect contact with the gate stack and, in particular, with gatedielectric layer 204. An inter-layer dielectric film 210 is formed abovestrain-inducing epitaxial source/drain regions 208 and directly adjacentto the sidewalk of gate the gate stack.

Semiconductor device 200 may be any semiconductor device incorporating agate, a channel region and a pair of source/drain regions. In accordancewith an embodiment of the present invention, semiconductor device 200 isselected from the group consisting of a planar MOS-FET, a memorytransistor or a Microelectromechanical System (MEMS). In one embodiment,semiconductor device 200 is a planar MOS-FET and is an isolated deviceor is one device in a plurality of nested devices. In a specificembodiment, semiconductor device 200 is a planar isolated PMOS-FEThaving isolation regions 214 on either side of strain-inducing epitaxialsource/drain regions 208, as depicted in FIG. 2. As will be appreciatedfor the typical integrated circuit, both N- and P-channel transistorsmay be fabricated on a single substrate to form a CMOS integratedcircuit.

Substrate 202 and, hence, channel region 204 may be comprised of anysemiconductor material that can withstand a manufacturing process and inwhich charge can migrate. In an embodiment, substrate 202 is comprisedof a crystalline silicon, silicon/germanium or germanium layer dopedwith a charge carrier, such as but not limited to phosphorus, arsenic,boron or a combination thereof. In one embodiment, the concentration ofsilicon atoms in substrate 202 is greater than 97%. In anotherembodiment, substrate 202 is comprised of an epitaxial layer grown atopa distinct crystalline substrate, e.g. a silicon epitaxial layer grownatop a boron-doped bulk silicon mono-crystalline substrate. Substrate202 may also comprise an insulating layer in between a bulk crystalsubstrate and an epitaxial layer to form, for example, asilicon-on-insulator substrate. In an embodiment, the insulating layeris comprised of a material selected form the group consisting of silicondioxide, silicon nitride, silicon oxy-nitride or a high-k dielectriclayer. Substrate 202 may alternatively comprise a III-V material. In anembodiment, substrate 202 is comprised of a III-V material such as, butnot limited to, gallium nitride, gallium phosphide, gallium arsenide,indium phosphide, indium antimonide, indium gallium arsenide, aluminumgallium arsenide, indium gallium phosphide or a combination thereof.Channel region 204 may be formed in a well of charge-carrier dopantimpurity atoms. In one embodiment, substrate 202 is comprised ofcrystalline silicon and the charge-carrier dopant impurity atoms areselected from the group consisting of boron, arsenic, indium orphosphorus. In another embodiment, substrate 202 is comprised of a III-Vmaterial and the charge-carrier dopant impurity atoms are selected fromthe group consisting of carbon, silicon, germanium, oxygen, sulfur,selenium or tellurium.

The strain-inducing epitaxial source/drain regions 208 may be comprisedof a low defect density mono-crystalline film having a lattice constantdifferent than the lattice constant of substrate 202. The latticeconstants are based on the atomic spacings and the unit cellorientations within each of the channel region 204 and thestrain-inducing epitaxial source/drain regions 208. Thus, a pair ofsemiconductor regions formed within a crystalline substrate and having alattice constant different than that of the crystalline substrate mayimpart a uniaxial strain to the portion of the crystalline substrate inbetween the pair of semiconductor regions. For example, in accordancewith an embodiment of the present invention, the lattice constant ofstrain-inducing epitaxial source/drain regions 208 is larger than thelattice constant of channel region 204 and imparts a uniaxialcompressive strain to the lattice of channel region 204. Thus, when thelattice constant of strain-inducing epitaxial source/drain regions 208is larger than the lattice constant of channel region 204, thelattice-forming atoms of the strain-inducing epitaxial source/drainregions 208 are pushed together from their normal resting state andinduce a compressive strain on channel region 204 as they attempt torelax. In a specific embodiment, this uniaxial compressive straininvoked on channel region 204 increases hole mobility in channel region204. In an alternative embodiment of the present invention, the latticeconstant of strain-inducing epitaxial source/drain regions 208 issmaller than the lattice constant of channel region 204 and imparts auniaxial tensile strain to the lattice of channel region 204. Thus, whenthe lattice constant of strain-inducing epitaxial source/drain regions208 is smaller than the lattice constant of channel region 204, thelattice-forming atoms of the strain-inducing epitaxial source/drainregions 208 are pulled apart from their normal resting state and inducea tensile strain on channel region 204 as they attempt to relax. In aspecific embodiment, this uniaxial tensile strain invoked on channelregion 204 increases electron mobility in channel region 204.

Strain-inducing epitaxial source/drain regions 208 may be comprised ofany material having a lattice constant different than the latticeconstant of channel region 204 and having a resistivity sufficiently lowto mitigate parasitic resistance. In one embodiment, channel region 204is comprised of Si_(x)Ge_(1−x) and strain-inducing epitaxialsource/drain regions 208 are comprised of Si_(y)Ge_(1−y) where 0≦x, y≦1and x≠y. In a specific embodiment, semiconductor device 200 is aPMOS-FET, channel region 204 is comprised of silicon (i.e. x=1) andstrain-inducing epitaxial source/drain regions 208 are comprised ofsilicon/germanium having an atomic ratio of 70:30 (i.e. y=0.7). Inanother embodiment, channel region 204 is comprised of silicon andstrain-inducing epitaxial source/drain regions 208 are comprised ofcarbon-doped silicon. In a specific embodiment, semiconductor device 200is an NMOS-FET, channel region 204 is comprised of silicon andstrain-inducing epitaxial source/drain regions 208 are comprised ofcarbon-doped silicon having an atomic concentration of substitutionalcarbon atoms in the range of 0.5-1.5%. In an alternative embodiment,channel region 204 is comprised of a III-V material selected from thegroup consisting of Al_(x)Ga_(1−x)As, In_(x)Ga_(1−x)As, In_(x)Ga_(1−x)Por Al_(x)In_(1−x)Sb and strain-inducing epitaxial source/drain regions208 are comprised of Al_(y)Ga_(1−y)As, In_(y)Ga_(1−y)As, In_(y)Ga_(1−y)Por Al_(y)In_(1−y)Sb, respectively, where 0≦x, y≦1 and x≠y. In aparticular embodiment, source/drain legions 208 are comprised of amaterial having a lattice constant different than the lattice constantof channel region 204 by a factor of at least 0.1%.

Strain-inducing epitaxial source/drain regions 208 may further comprisecharge-carrier dopant impurity atoms. In one embodiment, strain-inducingepitaxial source/drain regions 208 are comprised of epitaxialsilicon/germanium and the charge-carrier dopant impurity atoms are boronatoms. In a specific embodiment, semiconductor device 200 is a PMOS-FET,channel region 204 is comprised of silicon and strain-inducing epitaxialsource/drain regions 208 are comprised of silicon/germanium having agermanium atomic concentration in the range of 20-35% with aconcentration of boron dopant impurity atoms in the range of5×10¹⁹-5×10²⁰ atoms/cm³. In another embodiment, strain-inducingepitaxial source/drain regions 208 are comprised of a III-V material andthe charge-carrier dopant impurity atoms are selected from the groupconsisting of carbon, silicon, germanium, oxygen, sulfur, selenium ortellurium. Regions of out-diffusion 212 from strain-inducing epitaxialsource/drain regions 208 and in substrate 202 may be formed adjacent tothe periphery of strain-inducing epitaxial source/drain regions 208, asdepicted in FIG. 2. In one embodiment, strain-inducing epitaxialsource/drain regions 208 are comprised of boron-doped silicon/germaniumand the regions of out-diffusion 212 are comprised of boron atoms. In aparticular embodiment, the concentration of boron atoms in regions ofout-diffusion 212 is in the range of 1×10¹⁷-5×10²⁰ atoms/cm³.

The gate stack comprised of gate dielectric layer 206 and gate electrode218 above channel region 204 and in direct contact with strain-inducingepitaxial source/drain regions 208 may be any stack of materials havinga conductive region with a dielectric layer between the channel region204 and the gate stack. In one embodiment, the gate dielectric layer isformed only between the gate electrode 218 and channel region 204. inanother embodiment, the gate dielectric layer 206 extends along thesidewalls of gate electrode 218 and directly adjacent to inter-layerdielectric film 210, as depicted in FIG. 2.

Gate dielectric layer 206 may comprise any dielectric material suitableto insulate a conductive region 218 from channel region 204. Forexample, in accordance with an embodiment of the present invention, gatedielectric layer 206 is comprised of a high-k dielectric layer. In oneembodiment, the high-k dielectric layer is selected from the groupconsisting of hafnium oxide, hafnium oxy-nitride, hafnium silicate,lanthanum oxide, zirconium oxide, zirconium silicate, tantalum oxide,barium strontium titanate, barium titanate, strontium titanate, yttriumoxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobateor a combination thereof. Furthermore, a portion of gate dielectriclayer 206 may comprise a layer of native oxide formed from the top fewlayers of substrate 202. In an embodiment, gate dielectric layer 206 iscomprised of a top high-k portion and a lower portion comprised of anoxide of a semiconductor material. In one embodiment, gate dielectriclayer 206 is comprised of a top portion of hafnium oxide and a bottomportion of silicon dioxide or silicon oxy-nitride. In an alternativeembodiment, gate dielectric layer 206 is comprised substantially of anoxide layer of the semiconductor material of substrate 202. In aspecific embodiment, substrate 202 is comprised substantially of siliconand gate dielectric layer 206 is comprised substantially of silicondioxide or silicon oxy-nitride.

Gate electrode 218 may be comprised of any conductive material having asuitable workfunction. In an embodiment, gate electrode 218 is a metalgate electrode. In one embodiment, gate electrode 218 is comprised of ametal layer selected from the group consisting of metal nitrides, metalcarbides, metal suicides, metal aluminides, hafnium, zirconium,titanium, tantalum, aluminum, ruthenium, palladium, platinum, cobalt,nickel or conductive metal oxides, e.g. ruthenium oxide. In a specificembodiment, gate electrode 218 is comprised of anon-workfunction-setting fill material formed above a metalworkfunction-setting layer. In an alternative embodiment, gate electrode218 is comprised of doped polycrystalline silicon.

Inter-layer dielectric film 210 covers strain-inducing epitaxialsource/drain regions 208 and is directly adjacent to the sidewalls ofthe gate stack. Inter-layer dielectric film 210 may be comprised of anymaterial suitable withstand the fabrication of a plurality ofinterconnects above semiconductor device 200 while maintaining asufficient electrical isolation between semiconductor device 200 and anyneighboring semiconductor devices. In one embodiment, inter-layerdielectric film 210 is comprised of silicon dioxide or siliconoxy-nitride. In another embodiment, inter-layer dielectric film 210 iscomprised of a low-k dielectric material. In a specific embodiment,inter-layer dielectric film 210 is comprised of carbon-doped siliconoxide having a dielectric constant in the range of 2.5-4.

Tipless strain-inducing epitaxial source/drain regions may beincorporated into a semiconductor device by using a dielectric gatestack placeholder in a replacement gate integration scheme. FIGS. 3A-Jillustrate cross-sectional views representing the formation of a planarMOS-FET having tipless epitaxial source/drain regions, in accordancewith an embodiment of the present invention.

Referring to FIG. 3A, a pre-patterned dielectric gate stack placeholderlayer 330 is formed above a substrate 302. Substrate 302 may be anysubstrate described in association with substrate 202 from FIG. 2. Inaccordance with an embodiment of the present invention, isolationregions 314 are incorporated into substrate 302, as depicted in FIG. 3A.In a specific embodiment, isolation regions 314 are comprisedsubstantially of silicon dioxide and are fabricated by a shallow-trenchisolation (STI) integration scheme.

Pre-patterned dielectric gate stack placeholder layer 330 may becomprised of any dielectric material suitable to be patterned selectiveto substrate 302 and isolation regions 314 and suitable to inhibitgrowth of a semiconductor material during a subsequent epitaxialdeposition process. In one embodiment, pre-patterned dielectric gatestack placeholder layer 330 is comprised of a material selected from thegroup consisting of silicon dioxide, silicon oxy-nitride and siliconnitride. In a specific embodiment, substrate 302 is comprisedsubstantially of silicon, isolation regions 314 are comprised of silicondioxide and pre-patterned dielectric gate stack placeholder layer 330 iscomprised substantially of silicon nitride. A protecting layer may beincorporated between pre-patterned dielectric gate stack placeholderlayer 330 and substrate 302. In one embodiment, a native layer ofsilicon dioxide is formed between pre-patterned dielectric gate stackplaceholder layer 330 and substrate 302. However, in an alternativeembodiment, pre-patterned dielectric gate stack placeholder layer 330 isformed directly on the top surface of substrate 302, as depicted in FIG.3A. Thus, in one embodiment, a distinct gate dielectric placeholder isnot required in a replacement gate integration scheme.

Pre-patterned dielectric gate stack placeholder layer 330 may bedeposited by any technique suitable to provide a reliable (i.e. uniformcomposition and thickness) dielectric layer above the top surface ofsubstrate 302. In accordance with an embodiment of the presentinvention, pre-patterned dielectric gate stack placeholder layer 330 isformed by a chemical vapor deposition (CND) process. In one embodiment,pre-patterned dielectric gate stack placeholder layer 330 is comprisedof stoichiometric silicon nitride (Si₃N₄) and is deposited by a CVDprocess utilizing the precursors SiH₄ and NH₃ at a temperature in therange of 500-850 degrees Celsius. Pre-patterned dielectric gate stackplaceholder layer 330 may be deposited to any thickness suitable todefine the height of a subsequently formed gate stack. In accordancewith an embodiment of the present invention, pre-patterned dielectricgate stack placeholder layer 330 is deposited to a thickness in therange of 50-200 nanometers.

Referring to FIG. 3B, pre-patterned dielectric gate stack placeholderlayer 330 is patterned to form dielectric gate stack placeholder 332without substantially impacting substrate 302 or isolation regions 314.In accordance with an embodiment of the present invention, alithography/etch process is used to provide dielectric gate stackplaceholder 332. For example, in one embodiment, pre-patterneddielectric gate stack placeholder layer 330 is patterned by firstpatterning a positive photo-resist layer above pre-patterned dielectricgate stack placeholder layer 330 upon exposure to a wavelength of lightselected from the group consisting of 248 nm, 193 nm and 157 nm. Inanother embodiment, an e-beam direct-write process is used to patternthe positive photo-resist layer. An etch process may then be used topattern pre-patterned dielectric gate stack placeholder layer 330. Inone embodiment, a dry etch process is used in a particular embodiment,pre-patterned dielectric gate stack placeholder layer 330 is comprisedsubstantially of silicon and the dry etch process comprises ananisotropic plasma etch process wherein the plasma is generated fromgases selected from the group consisting of HBr and Cl₂. In oneembodiment, a hard-mask layer is utilized in between the positivephoto-resist and pre-patterned dielectric gate stack placeholder layer330. Dielectric gate stack placeholder 332 may be patterned to any widthsuitable to provide a channel region having a desired channel length insubstrate 302. That is, the width of dielectric gate stack placeholder332 may subsequently determine the width of a gate stack above substrate302. In one embodiment, the width of dielectric gate stack placeholder332 is the width of the critical dimension of the lithographic processused to pattern pre-patterned dielectric gate stack placeholder layer330. In another embodiment, the width of dielectric gate stackplaceholder 332 is in the range of 5-500 nanometers. In a specificembodiment, the width of dielectric gate stack placeholder 332 is in therange of 10-100 nanometers.

Referring to FIGS. 3C and 3C′, etched-out regions 340 and 340′ may beformed in substrate 302 selective to dielectric gate stack placeholder332 and isolation regions 314. Etched-out regions 340 and 340′ may beformed by any technique suitable to selectively remove a portion ofsubstrate 302 and to undercut dielectric gate stack placeholder 332. Inone embodiment, etched-out regions 340 and 340′ are formed by etchingany exposed portions of substrate 302 with a dry etch process, a wetetch process or a combination thereof. In one embodiment, etched-outregions 340 are formed by a dry plasma etch using a plasma generatedfrom a gas selected from the group consisting of NF₃ or SF₆ to formisotropic etched-out regions 340, as depicted in FIG. 3C. In analternative embodiment, etched-out regions 340′ are formed by a wet etchusing NH₄OH or tetramethylammonium hydroxide. The wet etch may beanisotropic in that the etch rate is significantly slow in directions ofhigh crystal density. For example, in a specific embodiment, the wetetch is hindered by <111> crystal planes in a (100) silicon substrate toprovide etched-out regions 340′ having an undercut profile θ ofapproximately 55 degrees, as depicted in FIG. 3C′. The extent ofundercut underneath dielectric gate snick placeholder 332 may beincreased by first carrying out a brief dry etch followed by ananisotropic wet etch process. Etched-out regions 340 and 340′ may haveany depth suitable for subsequently defining the depth of an epitaxiallygrown strain-inducing source/drain region. In one embodiment, the depthof etched-out regions 340 and 340′ is in the range of 50-150 nanometers.Etched-out regions 340 and 340′ may undercut dielectric gate stackplaceholder 332 by any amount suitable to optimize the performance of asubsequently formed semiconductor device. in one embodiment, etched-outregions 340 and 340′ undercut dielectric gate stack, placeholder 332 byan amount in the range of 2-20% of the cross-section width of dielectricgate stack placeholder 332 on either side of dielectric gate stackplaceholder 332.

Referring to FIGS. 3D and 3D′, strain-inducing epitaxial source/drainregions 308 and 308′ are formed in etched-out regions 340 and 340′,respectively, and a channel region 304 is thus defined in substrate 302.Strain-inducing epitaxial source/drain regions 308 and 308′ may becomprised of any material described in association with strain-inducingepitaxial source/drain regions 208 from FIG. 2. Additionally, inaccordance with an embodiment of the present invention, strain-inducingepitaxial source/drain regions 308 and 308′ have a lattice constantdifferent from the lattice constant channel region 304. Thus, in oneembodiment, a uniaxial strain is imparted to channel region 304. In aparticular embodiment, the top surfaces of strain-inducing epitaxialsource/drain regions 308 and 308′ are raised above the top surface ofchannel region 304, as depicted in FIGS. 3D and 3D′.

Strain-inducing epitaxial source/drain regions 308 and 308′ may beformed by any technique suitable to form a highly uniform and low defectepitaxial layer. Particularly, strain-inducing epitaxial source/drainregions 308 and 308′ maybe formed by a process that does not leavematerial deposited on polar dielectric surfaces, such as on the surfaceof isolation regions 314 or dielectric gate stack placeholder 332. Thus,in accordance with an embodiment of the present invention, a totallyselective deposition process is used to form strain-inducing epitaxialsource/drain regions 308 and 308′ in substrate 302. In an embodiment,strain-inducing epitaxial source/drain regions 308 and 308′ aredeposited by a process selected from the group consisting of chemicalvapor epitaxy, molecular-beam epitaxy or laser-abolition epitaxy. In oneembodiment, strain-inducing epitaxial source/drain regions 308 and 308′are comprised of silicon/germanium and are deposited using theprecursors SiH₄ and GeH₄. A wet chemical clean may be carried outimmediately prior to the deposition of strain-inducing epitaxialsource/drain regions 308 and 308′. In one embodiment, the wet chemicalcleaning process step comprises the application of an aqueous solutionof hydrofluoric acid, ammonium fluoride or both to a silicon substrate302. In a particular embodiment of the present invention, upondeposition of strain-inducing epitaxial source/drain regions 308 and308′, regions of out-diffusion 312 may be formed adjacent to theperiphery of strain-inducing epitaxial source/drain regions 308, asdepicted in FIGS. 3D and 3D′. In one embodiment, the regions ofout-diffusion 312 are a consequence of the deposition temperature usedto form strain-inducing epitaxial source/drain regions 308 and 308′. Forconvenience, the structure of FIG. 3D′ having strain-inducing epitaxialsource/drain regions 308′ is illustrated throughout remaining FIGS.3E-J.

Referring to FIG. 3E, a blanket dielectric film 350 is deposited aboveisolation regions 314, strain-inducing epitaxial source/drain regions308′ and dielectric gate stack placeholder 332. Blanket dielectric film350 may be comprised of any material described in association withinter-layer dielectric film 210 from FIG. 2. Blanket dielectric film 350may be deposited by any technique suitable to provide a substantiallyconformal film over isolation regions 314, strain-inducing epitaxialsource/drain regions 308′ and dielectric gate stack placeholder 332. Inone embodiment, blanket dielectric film 350 is deposited by techniqueselected from the group consisting of a CVD process and a spin-oncoating process. Blanket dielectric film 350 may be deposited to anythickness suitable to entirely cover isolation regions 314,strain-inducing epitaxial source/drain regions 308′ and dielectric gatestack placeholder 332. In one embodiment, blanket dielectric film 350 isdeposited to a thickness in the range of 250-400 nanometers.

Referring to FIG. 3F, blanket dielectric film 350 is planarized to forminter-layer dielectric film 310 and to expose the top surface ofdielectric gate stack placeholder 332. Blanket dielectric film may beplanarized by any technique suitable to provide a substantially flatsurface for inter-layer dielectric film 310 without dishing below thetop surface of dielectric gate stack placeholder 332. In one embodiment,a timed planarization step is utilized. In another embodiment, achemical-mechanical polish step is used to planarize blanket dielectricfilm 350 and the top surface of dielectric gate stack placeholder 332acts as a natural polish-stop indicator.

Referring to FIG. 3G, dielectric gate stack placeholder 332 is removedto provide trench 360 in inter-layer dielectric film 310, above channelregion 304 and directly adjacent to strain-inducing epitaxialsource/drain regions 308′. Dielectric gate stack placeholder may beremoved by any technique suitable to minimally impact the exposedsurfaces of inter-layer dielectric film 310, channel region 304 andstrain-inducing epitaxial source/drain regions 308′. In accordance withan embodiment of the present invention, dielectric gate stackplaceholder 332 is removed by using a dry or a wet etch process step. Inone embodiment, dielectric gate stack placeholder 332 is comprisedsubstantially of silicon nitride, inter-layer dielectric film 310 iscomprised of silicon dioxide, channel region 304 is comprised ofsilicon, strain-inducing epitaxial source/drain regions 308′ arecomprised of silicon/germanium and a dry etch process utilizing at leastthe gas HBr is used to remove dielectric gate stack placeholder 332. Inanother embodiment, dielectric gate stack placeholder 332 is removed byusing a wet etch comprised of aqueous phosphoric acid having atemperature in the range of 130-165 degrees Celsius. In a specificembodiment, a thin layer of silicon dioxide is used between dielectricgate stack placeholder 332 and channel region 304 to act as an etchstop. The thin layer of silicon dioxide is subsequently removed by aquick wet etch step comprising ultra-dilute aqueous HF.

Referring to FIG. 3H, a gate dielectric layer 306 is deposited intotrench 360 above channel region 304 and in direct contact withstrain-inducing epitaxial source/drain regions 308′. Gate dielectriclayer 306 may be comprised of any material or material combinationdescribed in association with gate dielectric layer 206 from FIG. 2.Gate dielectric layer 306 may be deposited by any technique thatprovides substantially conformal coverage of the exposed surface ofchannel region 304. Furthermore, gate dielectric layer 306 may bedeposited by any technique that provides substantially conformalcoverage of the sidewalk of inter-layer dielectric film 310, as depictedin FIG. 3H. In accordance with an embodiment of the present invention,gate dielectric layer 306 is deposited by a technique selected from thegroup consisting of atomic layer deposition, chemical vapor depositionand thermal consumption of the top surface of channel region 304. Gatedielectric layer may be deposited to any thickness suitable to form ahigh performance capacitor with channel region 304 and a subsequentlyformed gate electrode. In one embodiment, gate dielectric layer iscomprised substantially of a high-k dielectric layer having a thicknessin the range of 10-60 Angstroms. In a specific embodiment, gatedielectric layer is comprised substantially of a top layer of hafniumoxide having a thickness in the range of 5-40 Angstroms and a bottomlayer of silicon dioxide having a thickness in the range of 3-6Angstroms. In an alternative embodiment, a gate dielectric layer isformed between pre-patterned dielectric gate stack placeholder layer 330and substrate 302 from FIG. 3A. The gate dielectric layer issubsequently patterned and carried through all of the process stepsdescribed in association with FIGS. 3B-G.

Referring to FIG. 3I, a conductive layer 370 is formed above the topsurfaces of gate dielectric layer 306 and in trench 360. Conductivelayer 370 may be comprised of any material described in association withgate electrode 218 from FIG. 2. In one embodiment, conductive layer 370is comprised of a thin workfunction-settling portion below a bulktrench-fill portion. Conductive layer 370 may be deposited by anytechnique and that can substantially fill trench 360 with minimal riskof void formation. In one embodiment, conductive layer 370 is depositedby a technique selected from the group consisting of electro-deposition,electroless-plating, atomic vapor deposition, chemical vapor depositionand physical vapor deposition.

Referring to FIG. 3J, the portions of gate dielectric layer 306 andconductive layer 370 above inter-layer dielectric film 310 are removedto provide gate electrode 318. The portions of gate dielectric layer 306and conductive layer 370 above inter-layer dielectric film 310 may beremoved by any technique suitable to provide a substantially flatsurface of inter-layer dielectric film 110. In one embodiment, theportions of gate dielectric layer 306 and conductive layer 370 aboveinter-layer dielectric film 310 are removed by a chemical-mechanicalpolish step.

Thus, tipless strain-inducing epitaxial source/drain regions may beincorporated into a semiconductor device by using a dielectric gatestack placeholder in a replacement gate integration scheme. In oneembodiment, strain-inducing epitaxial source/drain regions 308′ arecomprised substantially of boron-doped silicon/germanium, channel region304 is comprised substantially of silicon, and a compressive uniaxialstrain is invoked on channel region 304, as depicted by the arrows inFIG. 3J. The structure described in association with FIG. 3J may thenundergo typical process steps to complete the formation of asemiconductor device and to incorporate the device into an integratedcircuit. For example, in accordance with an embodiment of the presentinvention, contact holes are subsequently formed in inter-layerdielectric film 310 and above strain-inducing epitaxial source/drainregions 308′. A through-contact silicidation step is then carried outprior to formation of back-end metal layers. In an alternativeembodiment, a suicide layer is formed on strain-inducing epitaxialsource/drain regions 308′ prior to the deposition of blanket dielectricfilm 350 from FIG. 3E.

The present invention is not limited to planar semiconductor devices.FIGS. 4A-G illustrate cross-sectional views representing the formationof a trigate MOS-FET having tipless epitaxial source/drain regions, inaccordance with an embodiment of the present invention.

Referring to FIG. 4A, a dielectric gate stack placeholder 432 is formedabove a three-dimensional substrate 402 comprising a bulk semiconductorportion 402A and an isolation portion 402B. Etched-out regions 440 areformed in the exposed portions of bulk semiconductor portion 402A ofthree-dimensional substrate 402, as depicted in FIG. 4B. In accordancewith an embodiment of the present invention, a channel region 404 isretained underneath dielectric gate stack placeholder 432. Referring toFIG. 4C, strain-inducing epitaxial source/drain regions 408 are formedselectively in etched-out regions 440, directly adjacent to channelregion 404 and in direct contact with dielectric gate stack placeholder432. A blanket dielectric layer 450 is then deposited above dielectricgate stack placeholder 432, strain-inducing epitaxial source/drainregions 408 and isolation portion 402B of three-dimensional substrate402, as depicted in FIG. 4D. Referring to FIG. 4E, blanket dielectriclayer 450 and the top portion of dielectric gate stack placeholder 43are planarized to form inter-layer dielectric film 410 and planarizeddielectric gate stack placeholder 434. Planarized dielectric gate stackplaceholder 434 is then removed to form trench 460 in inter-layerdielectric film 410 and to expose channel region 404, as depicted inFIG. 4F. Referring to FIG. 4G, a gate dielectric layer 406 and a gateelectrode 418 are then formed in trench 460. Therefore, tiplessstrain-inducing epitaxial source/drain regions may be incorporated intoa trigate device by using a dielectric gate stack placeholder in areplacement gate integration scheme. The trigate device may beincorporated into an integrated circuit by conventional processingsteps, as known in the art.

The present invention is also not limited to the formation ofspacer-free semiconductor devices. A semiconductor gate stackplaceholder may be used having thin outside dielectric spacers thatinhibit deposition on the semiconductor gate stack placeholder during anepitaxial growth process. FIGS. 5A-B illustrate cross-sectional viewsrepresenting the formation of a planar MOS-FET having tipless epitaxialsource/drain regions and dielectric spacers, in accordance with anembodiment of the present invention.

Referring to FIG. 5A, a semiconductor gate stack placeholder 332 isprovided having dielectric sidewall spacers 590. This structurecorresponds with FIG. 3B, described above, but with the added feature ofdielectric sidewall spacers. In one embodiment, semiconductor gate stackplaceholder 332 is comprised substantially of polycrystalline siliconand dielectric sidewall spacers 590 are comprised substantially of adielectric material. Referring to FIG. 5B, strain-inducing epitaxialsource/drain regions 508 are formed on either side of dielectricsidewall spacers 590 and undercut both dielectric sidewall spacers 590and replacement gate electrode 518. This structure corresponds with FIG.3J, described above, but with the added feature of dielectric sidewallspacers.

Thus, a semiconductor device having tipless epitaxial source/drainregions and a method for its formation have been disclosed. In anembodiment, the semiconductor device comprises a gate stack on asubstrate. The gate stack is comprised of a gate electrode above a gatedielectric layer and is above a channel region in the substrate. Thesemiconductor device also comprises a pair of source/chain regions inthe substrate on either side of the channel region. The pair ofsource/drain regions is in direct contact with the gate dielectric layerand the lattice constant of the pair of source/drain regions isdifferent than the lattice constant of the channel region. In oneembodiment, the semiconductor device is formed by using a dielectricgate stack placeholder.

What is claimed is:
 1. A semiconductor device, comprising: a gate stackdisposed on a substrate, wherein the gate stack is comprised of a metalgate electrode above a channel region in the substrate, and a high-kgate dielectric layer between the metal gate electrode and the channelregion and along sidewalls of the metal gate electrode; a pair of sourcedrain regions in the substrate on either side of the channel region,wherein a lattice constant of the pair of source drain regions isdifferent than a lattice constant of the channel region, and wherein thepair of source drain regions is under the high-k gate dielectric layerand under a portion of the metal gate electrode; a shallow trenchisolation structure laterally adjacent to one of the pair ofsource/drain regions; and an inter-layer dielectric layer directlylaterally adjacent to and in contact with a portion of the high-k gatedielectric layer along the sidewalls of the metal gate electrode, theinter-layer dielectric layer over the one of the pair of source/drainregions and over the shallow trench isolation structure.
 2. Thesemiconductor device of claim 1, wherein the pair of source/drainregions have an undercut profile of approximately 55 degrees withrespect to a horizontal axis.
 3. The semiconductor device of claim 2,further comprising: regions of boron out-diffusion in the substrate andadjacent to a periphery of the pair of source/drain regions, wherein theregions of boron out-diffusion have a concentration of boron atomsapproximately in the range of 1×10¹⁷-5×10²⁰ atoms/cm³.
 4. Thesemiconductor device of claim 1, wherein the channel region is comprisedsubstantially of silicon atoms, and wherein the pair of source/drainregions is comprised substantially of silicon/germanium having an atomicconcentration of germanium atoms in the range of 20-35%.
 5. Thesemiconductor device of claim 1, wherein the lattice constant of thepair of source/drain regions is different than the lattice constant ofthe channel region by a factor of at least 0.1%.
 6. The semiconductordevice of claim 1, wherein the pair of source/drain regions is a pair ofstrain-inducing source/drain regions.
 7. The semiconductor device ofclaim 6, wherein the pair of strain-inducing source/drain regions is apair of tipless strain-inducing epitaxial source/drain regions.
 8. Thesemiconductor device of claim 1, wherein the high-k gate dielectriclayer comprises a material selected from the group consisting of hafniumoxide, hafnium oxy-nitride, hafnium silicate, lanthanum oxide, zirconiumoxide, zirconium silicate, tantalum oxide, barium strontium titanate,barium titanate, strontium titanate, yttrium oxide, aluminum oxide, leadscandium tantalum oxide, lead zinc niobate, and a combination thereof.9. The semiconductor device of claim 1, wherein the metal gate electrodecomprises a metal-containing layer selected from the group consisting ofmetal nitrides, metal carbides, metal silicides, metal aluminides,hafnium, zirconium, titanium, tantalum, aluminum, ruthenium, palladium,platinum cobalt, nickel, and conductive metal oxides.
 10. Thesemiconductor device of claim 1, wherein the semiconductor device is aspacer-free semiconductor device.
 11. A non-planar semiconductor device,comprising: a gate stack disposed on a substrate, wherein the gate stackis comprised of a metal gate electrode above a three-dimensional channelregion in the substrate, and a high-k gate dielectric layer between themetal gate electrode and the three-dimensional channel region and alongsidewalls of the metal gate electrode; a pair of source/drain regions inthe substrate on either side of the three-dimensional channel region,wherein a lattice constant of the pair of source/drain regions isdifferent than a lattice constant of the three-dimensional channelregion, and wherein the pair of source drain regions is under the high-kgate dielectric layer and under a portion of the metal gate electrode; ashallow trench isolation structure laterally adjacent to one of the pairof source/drain regions; and an inter-layer dielectric layer directlylaterally adjacent to and in contact with a portion of the high-k gatedielectric layer along the sidewalls of the metal gate electrode, theinter-layer dielectric layer over the one of the pair of source/drainregions and over the shallow trench isolation structure.
 12. Thenon-planar semiconductor device of claim 11, wherein the pair ofsource/drain regions have an undercut profile of approximately 55degrees with respect to a horizontal axis.
 13. The non-planarsemiconductor device of claim 12, further comprising: regions of boronout-diffusion in the substrate and adjacent to a periphery of the pairof source/drain regions, wherein the regions of boron out-diffusion havea concentration of boron atoms approximately in the range of1×10¹⁷-5×10²⁰ atoms/cm³.
 14. The non-planar semiconductor device ofclaim 11, wherein the three-dimensional channel region is comprisedsubstantially of silicon atoms, and wherein the pair of source/drainregions is comprised substantially of silicon/germanium having an atomicconcentration of germanium atoms in the range of 20-35%.
 15. Thenon-planar semiconductor device of claim 11, wherein the latticeconstant of the pair of source/drain regions is different than thelattice constant of the three-dimensional channel region by a factor ofat least 0.1%.
 16. The non-planar semiconductor device of claim 11,wherein the pair of source/drain regions is a pair of strain-inducingsource/drain regions.
 17. The non-planar semiconductor device of claim16, wherein the pair of strain-inducing source/drain regions is a pairof tipless strain-inducing epitaxial source/drain regions.
 18. Thenon-planar semiconductor device of claim 11, wherein the high-k gatedielectric layer comprises a material selected from the group consistingof hafnium oxide, hafnium oxy-nitride, hafnium silicate, lanthanumoxide, zirconium oxide, zirconium silicate, tantalum oxide, bariumstrontium titanate, barium titanate, strontium titanate, yttrium oxide,aluminum oxide, lead scandium tantalum oxide, lead zinc niobate, and acombination thereof.
 19. The non-planar semiconductor device of claim11, wherein the metal gate electrode comprises a metal-containing layerselected from the group consisting of metal nitrides, metal carbides,metal silicides, metal aluminides, hafnium, zirconium, titanium,tantalum, aluminum, ruthenium, palladium, platinum, cobalt, nickel, andconductive metal oxides.
 20. The non-planar semiconductor device ofclaim 11, wherein the semiconductor device is a spacer-freesemiconductor device.